publication date : oct 2011 1 < silicon rf power mos fet ( discrete ) > rd 30h v f1 rohs compliance, silicon mosfet power transistor, 175 mhz,30w description rd30hvf1 is a mos fet type transistor specifically designed for v hf rf power amplifiers applications. features high power g ain: pout> 30 w, gp> 14.7 db @vdd= 12.5 v,f= 175m hz high efficiency: 60 %typ. application for output stage of high power amplifiers in v hf band mobile radio sets. rohs complian t rd 30h vf1 - 101 is a rohs complian t products. rohs compliance is indicate by the letter ?g? after the lot marking . absolute maximum ratings (tc=25 c unless otherwise noted) symbol parameter conditions ratings unit v dss drain to source voltage vgs=0v 30 v v gss gate t o source voltage vds=0v +/ - 20 v pch channel dissipation tc=25 c 75 w pin input power zg=zl=50 ? 2.5 w id drain current - 7 a t ch channel temperature - 175 c tstg storage temperature - - 40 to +1 75 c rth j - c thermal resistance junction to case 2.0 c/ w note 1: above parameters are guaranteed independently. outline drawing 1 4 . 0 + / - 0 . 4 3 . 0 + / - 0 . 4 5 . 1 + / - 0 . 5 r1.6 2 . 3 + / - 0 . 3 4-c1 2 6 . 6 + / - 0 . 3 0 . 1 0 2.8+/-0.3 3 18.0+/-0.3 22.0+/-0.3 7.6+/-0.3 1 7.2+/-0.5 pin 1.drain 2.source 3.gate unit:mm
< silicon rf power mos fet ( discrete ) > rd30h v f1 rohs compliance, silicon mosfet power transistor, 175 m hz,30w publication date : oct 2011 2 electrical characteristics (tc=25 c , unless otherwise noted) limits unit symbol parameter conditions min typ max. i dss zero gate voltage drain current v ds =1 7 v, v gs =0v - - 130 u a i gss gate to source leak current v gs =10v, v ds =0v - - 1 u a v th gate t hreshold v oltage v ds =1 2 v, i ds =1ma 1.3 1.8 2.3 v pout output power f= 175 mhz , v dd = 12.5 v 30 35 - w ? d drain efficiency pin= 1.0w, idq=0.5a 55 60 - % load vswr tolerance v dd =15.2v,po=30w(pincontrol ) f= 175 mhz ,idq=0.5a,zg=50 ? load vswr=20:1(all phase) no destroy - note : above parameters , ratings , limits and conditions are subject to change.
< silicon rf power mos fet ( discrete ) > rd30h v f1 rohs compliance, silicon mosfet power transistor, 175 m hz,30w publication date : oct 2011 3 typical characteristics channel dissipation vs. ambient temperature 0 20 40 60 80 100 0 40 80 120 160 200 ambient temperature ta ( c ) c h a n n e l d i s s i p a t i o n p c h ( w ) . . . vds vs. crss characteristics 0 4 8 12 16 20 0 5 10 15 20 vds(v) c r s s ( p f ) ta =+ 25 c f=1mhz vds vs. coss characteristics 0 20 40 60 80 100 120 140 0 5 10 15 20 vds(v) c o s s ( p f ) ta =+ 25 c f=1mhz vds vs. ciss characteristics 0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 vds(v) c i s s ( p f ) ta =+ 25 c f=1mhz vds-ids characteristics 0 2 4 6 8 10 0 2 4 6 8 10 vds(v) i d s ( a ) ta =+ 25 c vgs=5v vgs=4.5v vgs=4v vgs=3.5v vgs=3v vgs=5.5v vgs-ids characteristics 0 2 4 6 8 10 0 1 2 3 4 5 vgs(v) i d s ( a ) ta =+ 25 c vds=10v
< silicon rf power mos fet ( discrete ) > rd30h v f1 rohs compliance, silicon mosfet power transistor, 175 m hz,30w publication date : oct 2011 4 typical characteristics vdd-po characteristics 0 20 40 60 80 4 6 8 10 12 14 vdd(v) p o ( w ) 0 2 4 6 8 10 12 14 16 i d d ( a ) po idd ta=25c f=175mhz pin=1.0w idq=0.5a zg=zi=50 ohm vgs-ids characteristics 2 0 2 4 6 8 2 3 4 5 vgs(v) i d s ( a ) vds=10v tc=-25~+75c -25c +75c +25c pin-po characteristics 0 10 20 30 40 50 0 0.5 1 1.5 2 2.5 pin(w) p o u t ( w ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) po d idd ta=25c f=175mhz vdd=12.5v idq=0.5a pin-po characteristics 0 10 20 30 40 50 0 10 20 30 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) ta=+25c f=175mhz vdd=12.5v idq=0.5a po gp
< silicon rf power mos fet ( discrete ) > rd30h v f1 rohs compliance, silicon mosfet power transistor, 175 m hz,30w publication date : oct 2011 5 test circuit(f=175mhz) rd30hvf1 175mhz l2:5turns,i.d6mm,d1.6mm p=1 silver plateted copper wire l2 c3:2200pf,330uf in parallel c3 c2:2200pf*2 in parallel l1 9.1kohm 100 34 10 56pf 100pf 8pf 10pf dimensions:mm 56pf rf-in vdd vgg 100ohm l1:4turns,i.d6mm,d1.6mm p=1 silver plateted copper wire c1 rf-out c2 c1:2200pf 10uf in parallel note:board material ptfe substrate micro strip line width=4.2mm/50ohm,er:2.7,t=1.6mm 90 100 12 27 32 l1 8.2kohm 8 4.8 10.8 43pf 5pf 50pf 54 44 32 51 90 100pf 33pf 100pf
< silicon rf power mos fet ( discrete ) > rd30h v f1 rohs compliance, silicon mosfet power transistor, 175 m hz,30w publication date : oct 2011 6 input/output impedance vs.frequency characteristics zin , zout f zin zout (mhz) (ohm) (ohm) conditions 135 0.71 - j 7.67 1.72 - j 0.86 po= 40 w, vdd=12.5v,pin= 1 .0 w 146 0.94 - j6.46 2.12 - j0.78 po= 38 w, vdd=12.5v,pin= 1.0 w 175 0.53 - j 5.34 1.87 - j 0.70 po= 35 w, vdd=12.5v,pin= 1.0 w f=146mhz zout f=175mhz zin f=135mhz zin f=135mhz zout f=175mhz zout f=146mhz zin zo=10 ?
< silicon rf power mos fet ( discrete ) > rd30h v f1 rohs compliance, silicon mosfet power transistor, 175 m hz,30w publication date : oct 2011 7 rd30hvf1 s-parameter data (@vdd=12.5v, id=500ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.867 -172.4 8.747 72.7 0.015 -11.6 0.687 -166.3 150 0.879 -176.3 5.523 61.2 0.014 -18.8 0.723 -168.8 175 0.885 -177.5 4.571 56.4 0.013 -22.2 0.740 -169.6 200 0.888 -179.1 3.852 52.4 0.012 -24.2 0.760 -170.5 250 0.905 178.5 2.877 44.1 0.010 -26.2 0.806 -172.5 300 0.915 176.2 2.202 37.1 0.009 -27.0 0.825 -174.8 350 0.926 174.1 1.754 31.4 0.007 -24.4 0.853 -177.1 400 0.933 171.8 1.422 25.8 0.006 -18.5 0.879 -179.4 450 0.936 169.5 1.167 20.9 0.005 -8.2 0.887 178.4 500 0.945 167.6 0.985 17.2 0.004 8.0 0.902 176.1 550 0.950 165.6 0.842 13.3 0.005 21.6 0.914 174.1 600 0.951 163.6 0.725 9.8 0.005 35.6 0.918 172.2 650 0.954 161.7 0.635 7.2 0.005 45.7 0.928 170.2 700 0.957 159.9 0.559 3.7 0.007 53.5 0.933 168.4 750 0.962 158.2 0.495 1.3 0.007 58.4 0.936 166.6 800 0.963 156.5 0.449 -0.5 0.008 61.6 0.943 164.8 850 0.963 154.8 0.407 -3.8 0.009 60.7 0.947 163.3 900 0.963 153.2 0.366 -5.2 0.011 61.5 0.947 161.7 950 0.962 151.6 0.337 -6.6 0.011 63.1 0.953 159.9 1000 0.964 150.1 0.315 -9.9 0.013 65.6 0.955 158.7 1100 0.966 146.9 0.275 -12.1 0.015 62.3 0.958 155.5 s11 s21 s12 s22
< silicon rf power mos fet ( discrete ) > rd30h v f1 rohs compliance, silicon mosfet power transistor, 175 m hz,30w publication date : oct 2011 8 a ttention: 1.high temperature ; this product might have a heat generation while op eration,please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near t he product,do not place the combustible material that have possibilities to arise the fire. 2. generation of high frequency power ; this product generate a high frequency power. please take notice that do not leakage the unnecessary electric wave and use t his products without cause damage for human and property per normal operation. 3. before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of m itsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specifi cation sheets, p lease contact one of our sales offices . 2.ra series products (rf power amplifier modules) and rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and in the application, which is base station applications and fixed station applications that oper ate with long term continuous transmission and a higher on - off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. for the reliability report which is describe d about predicted operating life time of mitsubishi silicon rf products , please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor . 3. rd series products use mosfet semiconductor technology. the y are sen sitive to esd voltage therefore a ppropriate esd precautions are required. 4. in the case of use in below than recommended frequency , t here is possibility to occur that the device is deteriorated or destroyed due to the rf - swing exceed the breakdown voltag e. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat - sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel tem perature for rd series products lower than 120deg/c(in case of tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximum rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precaution s regard ing assembly of these products into the equipment , please refer to the supplementary item s in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s o riginal form. 9. for additional ?s afety first ? in your circuit design and notes regarding the materials , please refer the last page of this data sheet . 10. please refer to the additional precaution s in the formal specification sheet.
< silicon rf power mos fet ( discrete ) > rd30h v f1 rohs compliance, silicon mosfet power transistor, 175 m hz,30w publication date : oct 2011 9 ? 2011 m itsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! mitsubishi elec tric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. re member to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non - flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ? these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s applicati on; they do not convey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electri c corporation or a third party. ? mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third - party?s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, including product data, diagrams, charts , programs and algorithms represents information on products at the time of publication of these material s, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommende d that customers contact mitsubishi electric corporation or an authorized m itsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccu racies or typographical errors. mitsubishi electric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporati on by various means, including the mitsubishi semiconductor home page (http: //www. m itsubishi e lectric.com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please b e sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from th e i nformation contained herein. ? mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric cor poration or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or underse a repeater use. ? the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in wh ole or in part these materials. ? if these products or technologies are subject to the japanese export control restrictions, they must b e exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ? please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.
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